Non-orthogonal slotted vias for semiconductor devices and associated systems and methods
AssigneeMicron Technology, Inc.
InventorsRaja Kumar Varma Manthena, Surendranath C. Eruvuru
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Abstract
Semiconductor devices with slotted vias, and associated systems and methods, are disclosed herein. In one embodiment, a routing region of the semiconductor device includes a set of slotted vias arranged in a non-orthogonal array pattern. Further, patterns of metal lines associated with the set of slotted vias are drawn to align and/or overlap with the slotted vias. As a result, the metal lines may include zig-zag patterns within the routing region. Further, edges of the slotted vias may have a staircase pattern with sets of horizontal and vertical line segments such that a combination of the horizontal and vertical line segments can orient the slotted vias in a non-orthogonal direction.
Claims20
A semiconductor device, comprising:
- a plurality of first conductive traces that each extends in a first direction;
- a plurality of second conductive traces that each extends in a second direction orthogonal to the first direction;
- and
- a plurality of slotted vias in a region, within which the second conductive traces overlap with the first conductive traces, wherein:
- each individual first conductive trace includes a first elongated segment oriented in a third direction rotated from the first direction by a first non-zero angle such that the third direction is different from the first and second directions;
- each individual second conductive trace includes a second elongated segment oriented in the third direction such that the first elongated segment aligns and overlaps with the second elongated segment;
- and
- each of the plurality of slotted vias has a primary axis oriented in the third direction such that it overlaps with a corresponding one of the first elongated segments.
A semiconductor device, comprising:
- a first conductive trace including a first elongated segment extending in a first direction, a second elongated segment extending in a second direction rotated from the first direction by a non-zero angle, and a third elongated segment extending in a third direction orthogonal to the first direction, wherein the second direction is different from the first and third directions, and the second elongated segment has a first end connected to the first elongated segment and a second end opposite to the first end connected to the third elongated segment;
- a second conductive trace including a first elongated segment extending in the third direction, a second elongated segment extending in the second direction, and a third elongated segment extending in the third direction, wherein the second elongated segment has a first end connected to the first elongated segment and a second end opposite to the first end connected to the third elongated segment;
- and
- a slotted via having a primary axis oriented in the second direction, wherein the slotted via overlaps with the second elongated segment of the first conductive trace and the second elongated segments of the second conductive trace.
A method of manufacturing a memory device, the method comprising:
- forming a plurality of first conductive traces in a first dielectric layer of the memory device, wherein the first conductive traces extend in a first direction;
- and
- forming a plurality of second conductive traces in a second dielectric layer located above the first dielectric layer, wherein the second conductive traces extend in a second direction orthogonal to the first direction, wherein:
- the second conductive traces overlap with the first conductive traces in a region including a plurality of slotted vias, and wherein:
- each individual first conductive trace includes a first elongated segments oriented in a third direction rotated from the first direction by a first non-zero angle such that the third direction is different from the first and second directions;
- each individual second conductive trace includes a second elongated segment oriented in the third direction such that the first elongated segment aligns and overlaps with the second elongated segment;
- and
- each of the plurality of slotted vias has a primary axis oriented in the third direction such that it overlaps with a corresponding one of the first elongated segments.
Dependencies are inferred from the claim text.