Semiconductor device with thermal release layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorJAR-MING HO
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Abstract
The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer. The first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm2/Watt and about 0.25° C. cm2/Watt.
Claims16
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first pad above the substrate;
- forming a first redistribution conductive layer on the first pad;
- and
- forming a first redistribution thermal release layer on the first redistribution conductive layer;
- wherein the first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm2/Watt and about 0.25° C. cm2/Watt.
Dependencies are inferred from the claim text.