Passivation layer for an integrated circuit device that provides a moisture and proton barrier

An integrated circuit device, comprising:

• a metal contact having a top surface, the top surface of the metal contact including a first surface portion, a second surface portion and a third surface portion;
• and
• a passivation layer extending on the first and second surface portions of the top surface of the metal contact;
• wherein the passivation layer comprises a stack of layers including:
• a tetraethyl orthosilicate (TEOS) layer;
• a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer;
• and
• a high-density Silicon-rich Nitride layer on top of the PTEOS layer;
• wherein the TEOS and PTEOS layers extend over the first surface portion of the top surface of the metal contact, but not over the second and third surface portions of the top surface of the metal contact;
• and
• wherein the high-density Silicon-rich Nitride layer extends over the first and second surface portions of the top surface of the metal contact, but not over the third surface portion of the top surface of the metal contact.