Defect density calculation method, defect-density calculation program, defect-density calculation apparatus, heat treatment control system and machining control system
AssigneeSony Semiconductor Solutions Corporation
InventorsNobuyuki Kuboi, Koji Eriguchi
Life of this patent
Estimating the term…
Abstract
A defect density calculation method according to one embodiment of the present disclosure is a method of calculating a temporal change of the defect density distribution in a semiconductor layer. The method includes calculating the temporal change of the defect density distribution on the basis of an arithmetic function using at least the activation energy of a detect included in the semiconductor layer, the processing temperature of the semiconductor layer, and the processing time of the semiconductor layer as arguments.
Claims10
A defect density calculation method of calculating a temporal change of a defect density distribution in a semiconductor layer, the method comprising
- calculating the temporal change of the defect density distribution on a basis of an arithmetic function using at least activation energy of a defect included in the semiconductor layer, processing temperature of the semiconductor layer, and processing time of the semiconductor layer as arguments.
A defect-density calculation program that calculates a temporal change of a defect density distribution in a semiconductor layer, the program causing a computer to calculate the temporal change of the defect density distribution on a basis of an arithmetic function using at least activation energy of a defect included in the semiconductor layer, processing temperature of the semiconductor layer, and processing time of the semiconductor layer as arguments.
A defect-density calculation apparatus that calculates a temporal change of a defect density distribution in a semiconductor layer, the apparatus comprising:
- a storing unit that stores an arithmetic function using at least activation energy of a defect included in the semiconductor layer, processing temperature of the semiconductor layer, and processing time of the semiconductor layer as arguments;
- and
- a calculation unit that calculates the temporal change of the defect density distribution on a basis of an output value of the arithmetic function obtained by assigning the activation energy, the processing temperature, and the processing time to the arithmetic function read from the storing unit depending on an elapse of the processing time.
A heat treatment control system comprising:
- a heat treatment unit that conducts heat treatment on a semiconductor layer;
- a control unit that controls the heat treatment unit;
- and
- a defect density change calculation unit, wherein
- the defect density change calculation unit includes
- a calculation unit that calculates a temporal change of the defect density distribution on a basis of an arithmetic function using at least activation energy of a defect included in the semiconductor layer, processing temperature of the semiconductor layer, and processing time of the semiconductor layer as arguments,
- a condition generating unit that generates a heat treatment condition for the heat treatment unit on a basis of the defect density distribution obtained by the calculation unit and a desired defect density distribution, and
- the heat treatment unit conducts the heat treatment on the semiconductor layer on a basis of the heat treatment condition generated by the condition generating unit.
A machining control system comprising:
- a machining unit that processes a semiconductor layer;
- a control unit that controls the machining unit;
- a defect density calculation unit;
- and
- a defect density change calculation unit, wherein
- the defect density calculation unit calculates a defect density distribution in the semiconductor layer generated when the machining unit processes the semiconductor layer, and outputs the defect density distribution obtained thereby to the defect density change calculation unit,
- the defect density change calculation unit includes
- a calculation unit that calculates a temporal change of the defect density distribution received from the defect density calculation unit on a basis of an arithmetic function using at least activation energy of a defect included in the semiconductor layer, processing temperature of the semiconductor layer, and processing time of the semiconductor layer as arguments, and
- a condition generating unit that generates a heat treatment condition for the heat treatment unit on a basis of the defect density distribution obtained by the calculation unit and a desired defect density distribution, and
- the machining unit processes the semiconductor layer on a basis of the machining condition generated by the condition generating unit.
Dependencies are inferred from the claim text.