Methods of forming transistors and devices comprising transistors
AssigneeMicron Technology, Inc.
InventorKevin J. Torek
Life of this patent
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Abstract
A method of forming a semiconductor structure comprises forming an array of vertical thin film transistors. Forming the array of vertical thin film transistors comprises forming a source region, forming a channel material comprising an oxide semiconductor material over the source region, exposing the channel material to a dry etchant comprising hydrogen bromide to pattern the channel material into channel regions of adjacent vertical thin film transistor structures, forming a gate dielectric material on sidewalls of the channel regions, forming a gate electrode material adjacent to the gate dielectric material, and forming a drain region over the channel regions. Related methods of forming semiconductor structures and an array of memory cells are also disclosed.
Claims20
A method of forming a transistor, the method comprising:
- forming an oxide semiconductor material adjacent to a source region;
- exposing the oxide semiconductor material to a dry etchant comprising hydrogen bromide to form a channel region adjacent to the source region;
- and
- forming a drain region adjacent to the channel region.
A method of forming a device, the method comprising:
- forming transistors over a control logic region, forming the transistors comprising:
- forming source regions adjacent to the control logic region;
- exposing an oxide semiconductor material adjacent to the source regions to a dry etchant comprising hydrogen bromide to form channel regions;
- forming a dielectric material adjacent to the channel regions;
- forming a conductive material adjacent to the dielectric material;
- and
- forming drain regions adjacent to the channel regions, the channel regions between the source regions and the drain regions.
A method of forming a transistor, the method comprising:
- forming an oxide semiconductor material over a conductive material;
- and
- exposing the oxide semiconductor material to a dry etchant comprising hydrogen bromide to form a channel region comprising the oxide semiconductor material.
Dependencies are inferred from the claim text.