Source/drain contact formation methods and devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Wei Chang, Yu-Ming Huang, Ethan Tseng, Ken-Yu Chang, Yi-Ying Liu
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Abstract
A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.
Claims20
A semiconductor device, comprising:
- a substrate;
- two semiconductor fins protruding from the substrate;
- an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins;
- a silicide layer over the epitaxial feature;
- a barrier layer over the silicide layer, the barrier layer including a metal nitride;
- and
- a metal layer over the barrier layer,
- wherein along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.
A semiconductor device, comprising:
- a substrate;
- two semiconductor fins protruding from the substrate;
- epitaxial features over each of the two semiconductor fins and merging into a merged epitaxial feature;
- a silicide layer over top and sidewall surfaces of the merged epitaxial feature;
- a first barrier layer over the silicide layer;
- a second barrier layer over the first barrier layer, wherein each of the first and the second barrier layers includes a metal nitride;
- a metal layer over the second barrier layer;
- and
- a dielectric layer surrounding the merged epitaxial feature, the silicide layer, the first barrier layer, the second barrier layer, and the metal layer, wherein the first barrier layer is substantially free from sidewalls of the dielectric layer, and the second barrier layer is on the sidewalls of the dielectric layer.
A semiconductor device, comprising:
- a substrate;
- two semiconductor fins protruding from the substrate;
- an isolation structure over the substrate and isolating the two semiconductor fins from each other;
- an epitaxial feature over and connected to the two semiconductor fins, the epitaxial feature having silicon germanium (SiGe);
- a dielectric layer over the isolation structure and surrounding the epitaxial feature, wherein the dielectric layer provides a hole and surfaces of the epitaxial feature are within the hole;
- a silicide layer inside the hole and over the surfaces of the epitaxial feature;
- a first barrier layer inside the hole and over the silicide layer, wherein the first barrier layer includes a metal nitride and is substantially free from sidewalls of the hole;
- a second barrier layer inside the hole and over the first barrier layer, wherein the second barrier layer is disposed on the sidewalls of the dielectric layer;
- and
- a metal layer over the second barrier layer and at least partially inside the hole,
- wherein along a boundary between the second barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.
Dependencies are inferred from the claim text.