Wafer bonding method and bonded wafer
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsChao WANG, Youdong JIANG, Yulong ZHANG, Zhiyong SUO
Life of this patent
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Abstract
A method of wafer bonding includes: forming a first hole in a first insulation layer disposed over a first substrate; performing a first deposition-self-etch process to deposit a first conductive material in the first hole to form a first conductive plug; forming a second hole in a second insulation layer disposed over a second substrate; performing a second deposition-self-etch process to deposit a second conductive material in the second hole to form a second conductive plug; and bonding the first conductive plug with the second conductive plug to form a first grain fusion layer between the first conductive plug and the second conductive plug.
Claims22
A method for wafer bonding, comprising:
- forming a first hole in a first insulation layer disposed over a first substrate;
- performing a first deposition-self-etch process to deposit a first conductive material in the first hole to form a first conductive plug;
- forming a second hole in a second insulation layer disposed over a second substrate;
- performing a second deposition-self-etch process to deposit a second conductive material in the second hole to form a second conductive plug;
- and
- bonding the first conductive plug with the second conductive plug to form a first grain fusion layer between the first conductive plug and the second conductive plug.
A method for wafer bonding, comprising:
- forming a first conductive element in a first insulation layer disposed over a first substrate;
- forming a first connection layer covering the first conductive element, wherein an average grain size of the first connection layer is smaller than an average grain size of the first conductive element;
- forming a second conductive element in a second insulation layer disposed over a second substrate;
- forming a second connection layer covering the second conductive element, wherein an average grain size of the second connection layer is smaller than an average grain size of the second conductive element;
- and
- bonding the first connection layer with the second connection layer to form a first grain fusion layer.
A bonded wafer, comprising:
- a first semiconductor structure, including a first substrate, a first insulation layer disposed over the first substrate, a first conductive element disposed in the first insulation layer, and a first connection layer covering the first conductive element;
- a second semiconductor structure, including a second substrate, a second insulation layer disposed over the second substrate, a second conductive element disposed in the second insulation layer, and a second connection layer covering the second conductive element;
- and
- a first grain fusion layer, including a crystal grain fusion of at least a portion of the first connection layer and at least a portion of the second connection layer, wherein the first connection layer is made of a first connection material having a grain size smaller than a first conductive material of the first conductive element.
Dependencies are inferred from the claim text.