Heat spreading isolation structure for semiconductor devices
AssigneeGlobalFoundries U.S. Inc.
InventorsMark D. Levy, Siva P. Adusumilli, Alvin J. Joseph
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Abstract
A structure includes an active device over an area of a substrate, and a heat spreading isolation structure adjacent the active device. The isolation structure includes a dielectric layer above a heat-conducting layer. The heat-conducting layer may include polycrystalline graphite. The heat-conducting layer provides a heat sink, which provides a high thermal conductivity path for heat with low electrical conductivity. The heat-conducting layer may extend into the substrate. The substrate may include an SOI substrate in which case the heat-conducting layer may extend through the buried insulator thereof.
Claims20
A structure, comprising:
- an active device over an area of a substrate;
- and
- a heat spreading isolation structure adjacent the active device, wherein the isolation structure includes a dielectric layer above a heat-conducting layer.
A heat spreading isolation structure, comprising:
- in a trench in a substrate and adjacent an active device on the substrate, a body including:
- a dielectric layer;
- and
- a polycrystalline graphite, heat-conducting layer below the dielectric layer.
A method, comprising:
- forming a trench between adjacent semiconductor active regions;
- forming a hydrocarbon-containing material in the trench;
- introducing a dopant into at least a portion of the hydrocarbon-containing material in the trench to convert the at least a portion of the hydrocarbon-containing material to a disordered graphite;
- converting the disordered graphite to a polycrystalline graphite, heat-conducting layer;
- and
- forming a dielectric layer over the polycrystalline graphite, heat-conducting layer.
Dependencies are inferred from the claim text.