Semiconductor-manufacturing apparatus member and method of manufacturing the same
AssigneeNGK Insulators, Ltd.
InventorsHiroshi TAKEBAYASHI, Joyo Ito
Life of this patent
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Abstract
A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.
Claims10
A semiconductor-manufacturing apparatus member comprising:
- an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics;
- an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween;
- and
- a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween,
- wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.
A method of manufacturing a semiconductor-manufacturing apparatus member, the method comprising:
- (a) a step of preparing a lower plate, an upper plate that has a wafer placement surface, that contains an electrostatic electrode, and that is composed of ceramics, and an intermediate plate that has a thermal expansion coefficient larger than those of the upper plate and the lower plate;
- and
- (b) a step of obtaining a joined body in a manner in which a first metal joining material is disposed between an upper surface of the intermediate plate and a surface of the upper plate opposite the wafer placement surface, a second metal joining material is disposed between a lower surface of the intermediate plate and an upper surface of the lower plate, heat is added under pressure in this state, and subsequently, temperature is returned to room temperature.
Dependencies are inferred from the claim text.