Light irradiation type heat treatment method and heat treatment apparatus

A method of irradiating a substrate with light to heat the substrate, thereby forming an oxide film, said method comprising the steps of:

• (a) putting a substrate into a chamber;
• (b) irradiating said substrate with light to heat said substrate;
• and
• (c) supplying an oxidizing gas into said chamber to change an atmosphere within said chamber from an inert gas atmosphere to an oxidizing atmosphere when the temperature of said substrate reaches a predetermined switching temperature in the course of said step (b), wherein
• the supply of said oxidizing gas into said chamber is stopped and hydrogen gas is supplied into said chamber after the completion of said step (b).

A method of irradiating a substrate with light to heat the substrate, thereby forming an oxide film, said method comprising the steps of:

• (a) putting a silicon substrate into a chamber;
• (b) irradiating said substrate with light to heat said substrate;
• and
• (c) supplying an oxidizing gas into said chamber to change an atmosphere within said chamber from an inert gas atmosphere to an oxidizing atmosphere when the temperature of said substrate reaches a predetermined switching temperature in the course of said step (b), wherein
• said oxidizing gas is a gas selected from the group consisting of oxygen, ozone, oxygen radicals, and water vapor, and
• in said step (c), said oxidizing gas is mixed with an inert gas to supply the gas mixture into said chamber.

A heat treatment apparatus for irradiating a substrate with light to heat the substrate, thereby forming an oxide film, said heat treatment apparatus comprising:

• a chamber for receiving a substrate therein;
• a light irradiator for irradiating said substrate with light to heat said substrate;
• a gas supply part for supplying an oxidizing gas into said chamber;
• and
• a controller for controlling said gas supply part so as to supply said oxidizing gas into said chamber to change an atmosphere within said chamber from an inert gas atmosphere to an oxidizing atmosphere when the temperature of said substrate reaches a predetermined switching temperature in the course of the process of heating said substrate by irradiating said substrate with light from said light irradiator, wherein
• said light irradiator includes:
• a continuous lighting lamp for irradiating said substrate with light to preheat said substrate, and
• a flash lamp for irradiating said substrate with a flash of light after said preheating;
• and
• said controller controls said gas supply part so as to stop the supply of said oxidizing gas into said chamber immediately after the completion of the flash irradiation from said flash lamp.

A heat treatment apparatus for irradiating a substrate with light to heat the substrate, thereby forming an oxide film, said heat treatment apparatus comprising:

• a chamber for receiving a substrate therein;
• a light irradiator for irradiating said substrate with light to heat said substrate;
• a gas supply part for supplying an oxidizing gas into said chamber;
• and
• a controller for controlling said gas supply part so as to supply said oxidizing gas into said chamber to change an atmosphere within said chamber from an inert gas atmosphere to an oxidizing atmosphere when the temperature of said substrate reaches a predetermined switching temperature in the course of the process of heating said substrate by irradiating said substrate with light from said light irradiator, wherein
• said gas supply part stops the supply of said oxidizing gas into said chamber and supplies hydrogen gas into said chamber after the completion of the process of heating said substrate by irradiating said substrate with light from said light irradiator.

A heat treatment apparatus for irradiating a substrate with light to heat the substrate, thereby forming an oxide film, said heat treatment apparatus comprising:

• a chamber for receiving a silicon substrate therein;
• a light irradiator for irradiating said substrate with light to heat said substrate;
• a gas supply part for supplying an oxidizing gas into said chamber;
• and
• a controller for controlling said gas supply part so as to supply said oxidizing gas into said chamber to change an atmosphere within said chamber from an inert gas atmosphere to an oxidizing atmosphere when the temperature of said substrate reaches a predetermined switching temperature in the course of the process of heating said substrate by irradiating said substrate with light from said light irradiator, wherein
• said oxidizing gas is a gas selected from the group consisting of oxygen, ozone, oxygen radicals, and water vapor, and
• said gas supply part mixes said oxidizing gas with an inert gas to supply the gas mixture into said chamber.