Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate
AssigneesKwansei Gakuin Educational Foundation, Toyota Tsusho Corporation
InventorTadaaki KANEKO
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Abstract
Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor. The method for manufacturing a semiconductor substrate includes a first heating step of heating a heat treatment space which contains a semiconductor substrate and a transmission/reception body that transports atoms between the semiconductor substrate and the transmission/reception body such that a temperature gradient is formed between the semiconductor substrate and the transmission/reception body, and a second heating step of heating the same with the temperature gradient being vertically inverted.
Claims16
A method for manufacturing a semiconductor substrate, the method comprising:
- a first heating process of heating a heat treatment space accommodating a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate in a manner that a temperature gradient is formed between the semiconductor substrate and the release and reception body;
- and
- a second heating process of reversing the temperature gradient and performing heating.
A device for manufacturing a semiconductor substrate comprising:
- a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate;
- a heating furnace including a heating chamber that accommodates the main container, and a heating means that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body;
- and
- a temperature gradient inversion means that inverts high and low of the temperature gradient.
A device for manufacturing a semiconductor substrate comprising:
- a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate;
- and
- a heating furnace including a heating chamber that accommodates the main container, and a heating means that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body,
- wherein at least a first heating chamber and a second heating chamber are provided as the heating chamber, and
- high and low of a temperature gradient of the second heating chamber is opposite to high and low of a temperature gradient of the first heating chamber.
Dependencies are inferred from the claim text.