Method for manufacturing semiconductor device and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsYutaka MOTOYAMA, Hiroaki IKEGAWA, Satoshi TAKAGI, Daisuke SUZUKI
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Abstract
A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate.
Claims11
A method for manufacturing a semiconductor device, the method comprising:
- depositing an amorphous silicon film in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate;
- etching the amorphous silicon film by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess;
- and
- depositing a silicon film on the amorphous silicon film by supplying dichlorosilane to the substrate.
A substrate processing apparatus, comprising:
- a processing chamber;
- a substrate holding member disposed in the processing chamber and configured to hold a substrate having a recess in a surface of the substrate;
- a silicon-containing gas supply part configured to supply a silicon-containing gas and to deposit an amorphous silicon film in the recess;
- an etching gas supply part configured to supply an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess;
- and
- a dichlorosilane supply part configured to supply a dichlorosilane to the substrate and to deposit a silicon film on the amorphous silicon film.
Dependencies are inferred from the claim text.