Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorsAkitaka SHIMIZU, Masaki HOSONO, Kaname SATOU
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Abstract
An etching method of etching Si or SiN existing on a substrate, includes: forming an oxide film on a surface of Si or SiN by performing a radical oxidation process on the substrate having Si or SiN; performing a gas-based chemical process on the oxide film; and removing reaction products produced by the gas-based chemical process, wherein the forming the oxide film, the performing the gas-based chemical process, and the removing the reaction products are repeated a plurality of times.
Claims20
An etching method of etching Si or SiN existing on a substrate, comprising:
- forming an oxide film on a surface of the Si or the SiN by performing a radical oxidation process on the substrate having the Si or the SiN;
- performing a gas-based chemical process on the oxide film;
- and
- removing reaction products produced by the gas-based chemical process,
- wherein the forming the oxide film, the performing the gas-based chemical process, and the removing the reaction products are repeated a plurality of times.
An etching apparatus for etching Si or SiN existing on a substrate, comprising:
- a process container in which a substrate is accommodated;
- a stage provided inside the process container and on which the substrate is placed;
- a first gas supply mechanism configured to supply an oxygen-containing gas into the process container;
- a radical oxidation mechanism configured to generate oxygen-containing plasma with the oxygen-containing gas and perform a radical oxidation process mainly with oxygen radicals in the oxygen-containing plasma to form an oxide film on a surface of the Si or the SiN;
- a second gas supply mechanism configured to supply a gas for performing a chemical process on the oxide film into the process container;
- a temperature regulation mechanism configured to regulate a temperature of the stage;
- an exhaust mechanism configured to evacuate an interior of the process container;
- and
- a controller configured to control the radical oxidation mechanism, the first gas supply mechanism, the second gas supply mechanism, the temperature regulation mechanism, and the exhaust mechanism so as to perform a process of:
- forming the oxide film on the surface of the Si or the SiN by performing the radical oxidation process on the substrate having the Si or the SiN;
- performing a gas-based chemical process on the oxide film;
- removing reaction products produced by the gas-based chemical process;
- and
- repeating the forming the oxide film, the performing the gas-based chemical process, and the removing the reaction products a plurality of times.
Dependencies are inferred from the claim text.