US 2022/0189780 A1 · Electronic Device Including a Doped Gate Electrode and a Process of Forming the Same

Abstract

A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.

Claims20

Dependent claims

A process of forming an electronic device comprising:

forming a first film of a gate electrode layer, wherein the first film includes a III-V material;
forming a first dopant region of the gate electrode layer, wherein the first dopant region has a first conductivity type;
forming a second film of the gate electrode layer overlying the first film of the gate electrode layer, wherein the second film includes a III-V material, and
forming a second dopant region of the gate electrode layer, wherein the second dopant region overlies the first dopant region and has the first conductivity type.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

17/123,264Filed 16 Dec 2020

Published

16 Jun 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 64/0124
Of electrodes comprising a Schottky barrier to a semiconductor: to Group III-V semiconductors
H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 62/343
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions: gate regions of…

Electronic Device Including a Doped Gate Electrode and a Process of Forming the Same

Life of this patent

Electronic Device Including a Doped Gate Electrode and a Process of Forming the Same

Life of this patent

Abstract

Claims20