Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsTsuyoshi TAKAHASHI, Yu NUNOSHIGE
Life of this patent
Estimating the term…
Abstract
Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.
Claims15
1-10. (canceled)
A substrate processing method comprising:
- providing a substrate in a processing container;
- forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles;
- modifying the metal-containing nitride film by generating plasma in the processing container;
- and
- repeating the forming the metal-containing nitride film and the modifying the metal-containing nitride film for a second predetermined number of cycles.
A substrate processing apparatus comprising:
- a processing container;
- a stage on which a substrate is placed;
- a gas supply part configured to supply a gas into the processing container;
- a radio frequency power supply configured to generate plasma;
- and
- a controller,
- wherein the controller is configured to execute:
- providing the substrate in the processing container;
- forming a metal-containing nitride film on a surface of the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately into a processing space of the processing container from the gas supply part for a first predetermined number of cycles;
- modifying the metal-containing nitride film by supplying a processing gas from the gas supply part and generating plasma in the processing container by the radio frequency power source;
- and
- repeating the forming the metal-containing nitride film and the modifying the metal-containing nitride film for a second predetermined number of cycles.
Dependencies are inferred from the claim text.