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US 2022/0189777 A1Published application
Film formation method and film formation apparatus
AssigneeTokyo Electron Limited
InventorsYumiko KAWANO, Shuji AZUMO, Hiroki MURAKAMI
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Abstract
A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming a target film selectively in the first region among the first region and the second region; and removing a product produced in the second region in the forming the target film by supplying ClF3 gas to the substrate.
Claims10
1-7. (canceled)
A film formation method comprising:
- providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed;
- forming a target film selectively in the first region among the first region and the second region;
- and
- removing a product produced in the second region in the forming the target film by supplying ClF3 gas to the substrate.
1 more element
Dependencies are inferred from the claim text.