Fin field-effect transistor and method of forming the same

A semiconductor device, comprising:

• a semiconductor fin;
• a metal gate disposed over the semiconductor fin;
• a gate dielectric layer lining a portion of the metal gate;
• first spacers sandwiching the metal gate, wherein the first spacers have a first top surface and the gate dielectric layer has a second top surface, at least a first portion of the second top surface being coplanar with the first top surface;
• second spacers further sandwiching the first spacers, wherein the second spacers have a third top surface above the first top surface and the second top surface;
• and
• a gate electrode that essentially consists of tungsten and in contact with a fourth top surface of the metal gate and a second portion of the second top surface.

A semiconductor device, comprising:

• a semiconductor fin;
• a metal gate disposed over the semiconductor fin;
• first spacers sandwiching the metal gate;
• second spacers further sandwiching the first spacers, wherein the second spacers extend farther from the semiconductor fin than the first spacers do;
• and
• a first gate electrode and a second gate electrode contacting a top surface of the metal gate, wherein neither the first spacers nor the second spacers are in contact with any of the first or second gate electrode.