Method for beol metal to dielectric adhesion
AssigneeApplied Materials, Inc.
InventorsQintao Zhang, Jun-Feng Lu, Ting Cai, Ma Ning, Weiye He, Jian Kang
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Abstract
A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.
Claims20
A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, the method comprising:
- performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench;
- and
- depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.
A method of forming a contact trench in a dielectric layer of a semiconductor device, the method comprising:
- disposing a photoresist layer on the dielectric layer;
- performing a photolithography process including forming an aperture in the photoresist layer and directing an ion beam formed of reactive plasma ions into the aperture to form a trench in the dielectric layer;
- performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench;
- and
- depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.
A method of forming a contact trench in a dielectric layer of a semiconductor device, the method comprising:
- disposing a photoresist layer on the dielectric layer;
- performing a photolithography process including forming an aperture in the photoresist layer and directing an ion beam formed of reactive plasma ions into the aperture to form a trench in the dielectric layer;
- performing an ion implantation process wherein an ion beam formed of ionized silicon is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, wherein the ion implantation process is performed at a temperature between 150 degrees Celsius and 500 degrees Celsius;
- etching the implantation layer back to a depth where a concentration of silicon is higher than in other portions of the implantation layer;
- depositing tungsten in the trench atop an underlying bottom metal layer, wherein the tungsten adheres to the sidewall;
- and
- performing a chemical metal planarization process to remove excess tungsten overflowing from a top of the trench.
Dependencies are inferred from the claim text.