Substrate processing method and substrate processing apparatus
AssigneeSCREEN Holdings Co., Ltd.
InventorsAyumi HIGUCHI, Yuya AKANISHI
Life of this patent
Estimating the term…
Abstract
A substrate processing method includes an operation for holding a substrate in a horizontal position, the substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed, an operation for irradiating the altered layer with ultraviolet rays to reform the altered layer into a reformed layer, and an operation for supplying a chemical solution to the amorphous silicon layer having the reformed layer on the surface to perform wet etching on the amorphous silicon layer. This improves the efficiency of the wet etching on the amorphous silicon layer.
Claims18
A substrate processing method comprising:
- a) holding a substrate in a horizontal position, said substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed;
- b) irradiating said altered layer with an ultraviolet ray to reform said altered layer into a reformed layer;
- and
- c) supplying a chemical solution to said amorphous silicon layer having said reformed layer on the surface to perform wet etching on said amorphous silicon layer.
A substrate processing apparatus comprising:
- a substrate holder that holds a substrate in a horizontal position, said substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed;
- an ultraviolet irradiator that irradiates said altered layer with an ultraviolet ray to reform said altered layer into a reformed layer;
- and
- a chemical-solution supply part that supplies a chemical solution to said amorphous silicon layer having said reformed layer on the surface to perform wet etching on said amorphous silicon layer.
Dependencies are inferred from the claim text.