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US 2022/0189771 A1Published application
Underlayer film for semiconductor device formation
AssigneeApplied Materials, Inc.
InventorsGene LEE, Gabriela ALVA
Life of this patent
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Abstract
A structure includes an underlayer formed on a substrate, a mandrel layer formed on the underlayer, and a spacer layer formed on the mandrel layer. The underlayer includes a first material, and the spacer layer includes a second material. The first material is resistant to etching gases used in a first etch process to remove portions of the spacer layer and a second etch process to remove the mandrel layer.
Claims20
A structure, comprising:
- an underlayer formed on a substrate, the underlayer comprising a first material;
- a mandrel layer formed on the underlayer;
- and
- a spacer layer formed on the mandrel layer, the spacer layer comprising a second material, wherein
- the first material is resistant to etching gases used in a first etch process to remove portions of the spacer layer and a second etch process to remove the mandrel layer.
2 more elements
An underlayer for use in forming a structure, comprising:
- a first material formed on a substrate, wherein the first material is resistant to etching gases used in a first etch process to remove portions of a second material formed on the first material.
A method for forming a structure on a substrate, the method comprising:
- performing a deposition process, comprising conformally depositing a spacer layer on a mandrel layer and a surface of an underlayer that is exposed from the mandrel layer;
- and
- performing a first etch process, comprising removing portions of the spacer layer from a top surface of the mandrel layer and the surface of the under layer without removing the spacer layer from sidewalls of the mandrel layer,
- wherein the underlayer is resistant to etching gases used in the first etch process.
1 more element
Dependencies are inferred from the claim text.