Crystal film, semiconductor device including crystal film, and method of producing crystal film
AssigneesFlosfia Inc., National Institute for Materials Science
InventorsKatsuaki KAWARA, Yuichi OSHIMA, Mitsuru OKIGAWA
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Abstract
There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×107 cm−2 or less; and a surface area of 10 mm2 or more. There is provided a method of producing a crystalline film comprising, forming a first lateral crystal growth layer on a substrate by first lateral crystal growth; placing a mask on the first lateral crystal growth layer; and forming a second lateral crystal growth layer by second lateral crystal growth.
Claims22
A crystalline film comprising:
- a crystalline metal oxide as a major component;
- a corundum structure;
- a dislocation density of 1×107 cm−2 or less;
- and
- a surface area of 10 mm2 or more.
A crystalline film comprising:
- a crystalline metal oxide as a major component;
- a corundum structure;
- at least one or more lateral crystal growth layers;
- and
- a surface area of 10 mm2 or more.
A method of producing a crystalline film comprising:
- forming a first lateral crystal growth layer on a substrate by a first lateral crystal growth;
- placing a mask on the first lateral crystal growth layer;
- and
- forming a second lateral crystal growth layer by a second lateral crystal growth.
Dependencies are inferred from the claim text.