Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

A method to deposit a film comprising silicon, hafnium and oxygen onto a substrate, comprising:

• a) providing the substrate in a reactor;
• b) introducing into the reactor a composition comprising:
• (i) at least one organoaminosilane precursor compound having a formula of RxR3Si(NR1R2)3-x;
• wherein
• R is a linear or branched C1 to C6 alkyl;
• R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
• wherein
• R1 and R2 in organoamino group are linked to form a cyclic ring structure;
• or not linked to form a cyclic ring structure;
• x=0, 1, or 2;
• and
• (ii) at least one organoaminohafnium precursor compound having a formula of LxHf(NR1R2)4-x;
• wherein
• L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
• R1 and R2 are independently selected from linear or branched C1 to C6 alkyl in organoamino group;
• wherein
• R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
• and
• x=0, 1, or 2;
• c) purging the reactor with a purge gas;
• d) introducing an oxygen-containing source into the reactor;
• and
• e) purging the reactor with the purge gas;
• wherein
• melting point of the composition is <30° C.;
• the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group;
• the oxygen-containing source is selected from the group consisting of an oxygen plasma, ozone, a water vapor, water vapor plasma, nitrogen oxide plasma, a carbon oxide plasma, and combinations thereof;
• the purge gas selected from the group consisting of argon (Ar), nitrogen (N2), helium (He), neon, hydrogen (H2), and combinations thereof;
• deposition process is selected from the group consisting of a thermal atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD) process, and combinations thereof;
• the method is conducted at a temperature ranging from 100° C. to 600° C.;
• and
• b) through e) are repeated until a desired thickness of film is deposited.