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US 2022/0189766 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuichi YANAGISAWA, Hiromi SAWAI, Daisuke MATSUBAYASHI
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Abstract
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first oxide, an insulator over the first oxide, a first conductor over the insulator, a second conductor electrically connected to the first oxide, and a second oxide provided between the first oxide and the second conductor, and the contact area between the second oxide and the second conductor is larger than the contact area between the second oxide and the first oxide.
Claims15
A semiconductor device comprising:
- a first oxide;
- an insulator over the first oxide;
- a first conductor over the insulator;
- a second conductor electrically connected to the first oxide;
- and
- a second oxide provided between the first oxide and the second conductor,
- wherein a contact area between the second oxide and the second conductor is larger than a contact area between the second oxide and the first oxide.
4 more elements
A semiconductor device comprising:
- a first oxide comprising a concave portion;
- a first insulator over the first oxide;
- a first conductor over the first insulator;
- a second insulator over the first insulator and the first conductor;
- a second conductor electrically connected to the first oxide;
- and
- a second oxide provided between the first oxide and the second conductor,
- wherein the first insulator, the first conductor, and the second insulator are provided in the concave portion, and
- wherein the second oxide comprises a region overlapping with the second insulator.
6 more elements
Dependencies are inferred from the claim text.