Radiation of Substrates During Processing and Systems Thereof
AssigneeTokyo Electron Limited
InventorsMichael Edley, Xinghua Sun, Yen-Tien Lu, Angelique Raley, Henan Zhang, Hiroyuki Suzuki, Shan Hu
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Abstract
A method for processing a substrate includes performing a first etch process to form a plurality of partial features in a dielectric layer disposed over the substrate; performing an irradiation process to irradiate the substrate with ultra-violet radiation having a wavelength between 100 nm and 200 nm; and after the irradiation process, performing a second etch process to form a plurality of features from the plurality of partial features.
Claims20
A system comprising:
- a plurality of processing chambers configured to process a substrate within the processing chambers;
- a wafer holding location comprising a first electromagnetic radiation source configured to emit electromagnetic radiation onto a wafer located at the wafer holding location;
- and
- a transporting apparatus configured to move the substrate between the plurality of processing chambers and the wafer holding location.
A plasma processing apparatus comprising:
- a plasma processing chamber;
- a substrate holder disposed in the plasma processing chamber;
- an electrode configured to be powered to sustain a plasma within the plasma processing chamber;
- and
- a first electromagnetic radiation source configured to emit electromagnetic radiation onto the substrate holder with a first uniform distribution across an entire major surface of the substrate holder.
A method for processing a substrate, the method comprising:
- placing the substrate over a substrate holder disposed in a plasma processing chamber of a plasma processing system;
- flowing reactant gases into the plasma processing chamber;
- exposing the substrate to a plasma by powering an electrode of the plasma processing system;
- powering off the electrode and stopping the flowing of the reactant gases;
- illuminating the plasma processing chamber with electromagnetic radiation;
- and
- removing the substrate from the plasma processing chamber after the illuminating, wherein the method is configured to discharge the substrate from the substrate holder.
Dependencies are inferred from the claim text.