Methods of Performing Selective Low Resistivity Ru Atomic Layer Deposition and Interconnect Formed Using the Same
AssigneeThe Regents of the University of California
InventorsMichael Breeden, Victor Wang, Andrew Kummel
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Abstract
Provided by the inventive concept are methods for fabricating semiconductor devices, such as methods of atomic layer deposition (ALD). Aspects of the inventive concept include methods for depositing and forming Ru metal layers having low resistivity, forming Ru metal layers without the need for a post-deposition annealing step, forming Ru metal layers selectively on portions of a substrate without the need for passivation, and providing Ru metal layers for use in back end of the line (BEOL) applications in semiconductor devices that do not require a liner/barrier layer.
Claims20
A method for atomic layer deposition (ALD) of Ruthenium (Ru) on a substrate comprising at least one cycle of:
- exposing a surface of a substrate to a chemical precursor comprising Ru;
- depositing the chemical precursor on the surface of the substrate;
- and
- exposing the chemical precursor on the surface of the substrate to a co-reactant,
- to provide an Ru film on the surface of the substrate.
A method for ALD of Ru on a substrate comprising at least one cycle of:
- exposing a surface of a substrate to a chemical precursor comprising Ru(IHD)(CO)2;
- depositing the chemical precursor on the surface of the substrate;
- and
- exposing the chemical precursor on the surface of the substrate to a co-reactant comprising O2,
- to provide an Ru film on the surface of the substrate.
A method for ALD of Ru on a substrate comprising at least one cycle of:
- exposing a surface of a substrate to a chemical precursor comprising Ru(EtCp)2;
- depositing the chemical precursor on the surface of the substrate;
- and
- exposing the chemical precursor on the surface of the substrate to a co-reactant comprising O2,
- to provide an Ru film on the surface of the substrate.
Dependencies are inferred from the claim text.