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US 2022/0189736 A1Published application
Ion implantation apparatus
AssigneeNissin Ion Equipment Co., Ltd.
InventorsJian WANG, Shinsuke Inoue, Yuta Iwanami, Takashi Sakamoto, Weijiang Zhao
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Abstract
An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.
Claims20
An ion implantation apparatus comprising:
- a transfer device that transfers a wafer;
- a support device that supports the wafer at an implantation position;
- and
- a control device that controls the ion implantation apparatus to perform ion implantation processing on the wafer a plurality of times with respect to an entire surface of the wafer, while changing an implantation condition, and that controls the transfer device or the support device according to warpage information of the wafer.
1 more element
An ion implantation apparatus comprising:
- a transfer device that transfers a wafer;
- a support device that supports the wafer at an implantation position;
- a temperature adjustment device that adjusts a temperature of the wafer before or after ion implantation processing;
- and
- a control device that controls the ion implantation apparatus to perform ion implantation processing on the wafer a plurality of times with respect to an entire surface of the wafer, while changing an implantation condition, and that controls one or more of the transfer device, the support device, or the temperature adjustment device according to warpage information of the wafer.
2 more elements
An ion implantation apparatus comprising:
- a platen that comprises a first heater and that supports a wafer at an implantation position during implantation processing;
- a transfer arm that transfers the wafer between a vacuum spare chamber and the platen;
- a warpage measuring device that measures a warpage of the wafer;
- and
- a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer at the implantation position, receives warpage information corresponding to the measured warpage, and that controls the transfer arm or the first heater according to the warpage information.
2 more elements
Dependencies are inferred from the claim text.