Wordline boost driver

A method for writing a bit to a memory cell, the method comprising:

• generating, by wordline driver circuitry, a first voltage in response to a row access enable signal;
• charging, by boost driver circuitry, a capacitor using the first voltage:
• generating, by the boost driver circuitry, a second voltage using the first voltage and a voltage at the capacitor in response to a boost enable signal, wherein the second voltage is higher than the first voltage;
• outputting, by a wordline coupled to a second memory cell and the wordline driver circuitry, the first voltage to the memory cell before expiration of a first delay from receiving the row access enable signal;
• and
• outputting, by the wordline, the second voltage to the memory cell after expiration of a second delay from receiving the row access enable signal.

A memory system comprising:

• a capacitor;
• wordline driver circuitry configured to generate a first voltage in response to a row access enable signal;
• boost driver circuitry coupled to the wordline driver circuitry and the capacitor and being configured to charge the capacitor using the first voltage and to generate a second voltage using the first voltage and a voltage at the capacitor, wherein the second voltage is higher than the first voltage;
• and
• a wordline coupled to a memory cell and the wordline driver circuitry, the wordline being configured to output the first voltage or the second voltage to the memory cell,
• wherein the wordline driver circuitry comprises delay circuitry configured to output the first voltage at the wordline before expiration of a first delay from receiving the row access enable signal and to output the second voltage after expiration of a second delay from receiving the row access enable signal.