Ferroelectric memory and memory element thereof
AssigneesSony Semiconductor Solutions Corporation, Sony Group Corporation
InventorsJun OKUNO, Toshiyuki KOBAYASHI
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Abstract
A ferroelectric memory is intended to reduce an applied voltage required at the times of writing and reading. A ferroelectric capacitor includes a ferroelectric film and a top electrode and a bottom electrode including materials with different work functions formed above and below the ferroelectric film. The transistor is connected to either the top electrode or the bottom electrode to select the ferroelectric capacitor. A drive control unit applies, at the times of writing and reading, a voltage lower than that at the time of erasing by a predetermined potential difference to the ferroelectric film.
Claims14
A ferroelectric memory comprising:
- a ferroelectric capacitor including a ferroelectric film above and below which a top electrode and a bottom electrode including materials with different work functions are formed;
- a transistor connected to either the top electrode or the bottom electrode to select the ferroelectric capacitor;
- and
- a drive control unit that applies, at times of writing and reading, a voltage lower than that at a time of erasing by a predetermined potential difference to the ferroelectric film.
A ferroelectric memory element comprising:
- a ferroelectric film including a hafnium oxide film;
- a top electrode and a bottom electrode formed above and below the ferroelectric film, the top electrode and the bottom electrode including materials with different work functions;
- and
- a transistor connected to one of the top electrode and the bottom electrode via a contact.
Dependencies are inferred from the claim text.