Memory cell, device and method for writing to a memory cell

A method for writing to a memory cell, the memory cell comprising:

• a first and a second electrode;
• a spin-orbit-torque, SOT, layer comprising a first and a second electrode contact portion arranged in contact with the first and the second electrode, respectively, and an intermediate portion between the first and second electrode contact portions;
• a first magnetic tunnel junction, MTJ, layer stack arranged in contact with the intermediate portion;
• and
• a second MTJ layer stack arranged in contact with the second electrode contact portion and directly above the second electrode;
• and the method comprising:
• writing a logic state to the first MTJ layer stack by supplying an SOT switching current between the first and second electrodes and through the SOT layer such that a resistance state of the first MTJ layer stack is switched;
• and
• writing a logic state to the second MTJ layer stack by supplying an STT switching current through the second MTJ layer stack such that a resistance state of the second MTJ layer stack is switched.