Neuromorphic device

Abstract

This neuromorphic device including: a first element group; and a second element group, in which each of the first element group and the second element group includes a plurality of magnetic domain wall movement elements, each of the plurality of magnetic domain wall movement elements includes a magnetic domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the magnetic domain wall movement layer and the ferromagnetic layer, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

Dependencies are inferred from the claim text.