Transmission gate manufacturing method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Lun CHIEN, Pin-Dai SUE, Li-Chun TIEN, Ting-Wei CHIANG, Ting Yu CHEN
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Lun CHIEN, Pin-Dai SUE, Li-Chun TIEN, Ting-Wei CHIANG, Ting Yu CHEN
Estimating the term…
A method of manufacturing a transmission gate includes overlying a first active area with a first metal zero segment, the first active area including first and second PMOS transistors, overlying a second active area with a second metal zero segment, the second active area including first and second NMOS transistors, and configuring the first and second PMOS transistors and the first and second NMOS transistors as a transmission gate by forming three conductive paths. At least one of the conductive paths includes a first conductive segment perpendicular to the first and second metal zero segments, and the first and second metal zero segments have a first offset distance corresponding to three times a metal zero pitch.
A method of manufacturing a transmission gate, the method comprising:
A method of manufacturing a transmission gate, the method comprising:
A method of manufacturing a transmission gate, the method comprising:
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