Dynamic program-verify voltage adjustment for intra-block storage charge loss uniformity

A method comprising:

• determining an amount of threshold voltage distribution shift corresponding to an amount of time after programming of a reference page of a block of a memory device;
• adjusting a program-verify voltage based on the amount of threshold voltage distribution shift to obtain an adjusted program-verify voltage;
• and
• programming, using the adjusted program-verify voltage, a temporally subsequent page of the block at a time corresponding to the amount of time after the programming of the reference page.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• defining a metric derived from one or more parameters related to a reference page of a block of a memory device;
• determining, based on the metric, an amount of threshold voltage shift corresponding to an amount of time after programming of the reference page;
• adjusting a program-verify voltage based on the amount of threshold voltage distribution shift to obtain an adjusted program-verify voltage;
• storing the adjusted program-verify voltage as programming data;
• and
• programming, using the programming data, a temporally subsequent page of the block at a time corresponding to the amount of time after the programming of the reference page.