System and method for determining post bonding overlay

A system comprising:

• a controller configured to receive shape measurements from a wafer shape metrology sub-system, the controller including one or more processors configured to execute a set of program instructions stored in a memory, the set of program instructions configured to cause the one or more processors to:
• receive one or more stress-free shape measurements from a wafer shape sub-system;
• predict overlay between one or more features on a first wafer and one or more features on a second wafer based on the one or more stress-free shape measurements of the first wafer, the second wafer, and the post-bonding pair of the first wafer and the second wafer;
• and
• provide a feedback adjustment to one or more process tools based on the predicted overlay.

A method comprising:

• acquiring one or more stress-free shape measurements for a first wafer, a second wafer, and a post-bonding pair of the first wafer and the second wafer;
• predicting overlay between one or more features on the first wafer and one or more features on the second wafer based on the one or more stress-free shape measurements of the first wafer, the second wafer, and the post-bonding pair of the first wafer and the second wafer;
• and
• providing a feedback adjustment to one or more process tools based on the predicted overlay.

A wafer shape metrology system comprising:

• a wafer shape metrology sub-system configured to perform one or more stress-free shape measurements on a first wafer and a second wafer;
• and
• a controller communicatively coupled to the wafer shape metrology sub-system, the controller including one or more processors configured to execute a set of program instructions stored in a memory, the set of program instructions configured to cause the one or more processors to:
• receive the one or more stress-free shape measurements for the first wafer and the second wafer from the wafer shape sub-system;
• determine a first wafer shape distortion of the first wafer by comparing the first wafer shape to a first reference structure and determine a second wafer shape distortion of the second wafer by comparing the second wafer shape to a second reference structure;
• predict overlay between one or more features on the first wafer and one or more features on the second wafer based on the one or more stress-free shape measurements of the first wafer and the second wafer, the first wafer shape distortion, and the second wafer shape distortion;
• and
• provide a feedforward adjustment to one or more process tools based on the predicted overlay.

A system comprising:

• a controller configured to receive wafer shape measurements from a wafer shape metrology sub-system, the controller including one or more processors configured to execute a set of program instructions stored in a memory, the set of program instructions configured to cause the one or more processors to:
• receive one or more stress-free shape measurements for a first wafer and a second wafer from the wafer shape sub-system;
• determine a first wafer shape distortion of the first wafer by comparing the first wafer shape to a first reference structure and determine a second wafer shape distortion of the second wafer by comparing the second wafer shape to a second reference structure;
• predict overlay between one or more features on the first wafer and one or more features on the second wafer based on the one or more stress-free shape measurements of the first wafer and the second wafer, the first wafer shape distortion, and the second wafer shape distortion;
• and
• provide a feedforward adjustment to one or more process tools based on the predicted overlay.

A method comprising:

• acquiring one or more stress-free shape measurements for a first wafer and a second wafer;
• determining a first wafer shape distortion of the first wafer by comparing the first wafer shape to a first reference structure and determine a second wafer shape distortion of the second wafer by comparing the second wafer shape to a second reference structure;
• predicting overlay between one or more features on the first wafer and one or more features on the second wafer based on the one or more stress-free shape measurements of the first wafer and the second wafer, the first wafer shape distortion, and the second wafer shape distortion;
• and
• providing a feedforward adjustment to one or more process tools based on the predicted overlay.