Polymer and positive resist composition

Abstract

Provided is a polymer capable of forming a resist pattern in which pattern top loss is inhibited when used as a main chain scission-type positive resist. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, and the proportion of components having a molecular weight of 100,000 or more in the polymer is 10% or more. In general formula (I), X is a fluorine, chlorine, bromine, iodine, or astatine atom, and R1 is an organic group including 3 to 7 fluorine atoms. In general formula (II), R2 is a hydrogen atom, fluorine atom, unsubstituted alkyl group, or fluorine atom-substituted alkyl group, R3 is a hydrogen atom, unsubstituted alkyl group, or fluorine atom-substituted alkyl group, p and q are integers of 0 to 5, and p+q=5.

Dependencies are inferred from the claim text.