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AssigneeNissan Chemical Corporation
InventorsHiroyuki WAKAYAMA, Ryuta MIZUOCHI, Shou SHIMIZU, Yasunobu SOMEYA
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A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the above-described resist underlayer film forming composition. A resist underlayer film forming composition which contains a polymer having, at an end, an aliphatic ring that may be substituted by a substituent, while having a carbon-carbon bond that may be interrupted by a heteroatom, and which additionally contains an organic solvent. The aliphatic ring is a monocyclic or polycyclic aliphatic ring having 3-10 carbon atoms. The polycyclic aliphatic ring is a bicyclic ring or a tricyclic ring.
A resist underlayer film-forming composition comprising an organic solvent and a polymer having an aliphatic ring at a terminal, wherein the aliphatic ring optionally contains a carbon-carbon bond interrupted by a heteroatom, and wherein the aliphatic ring is optionally substituted with a substituent.
Dependencies are inferred from the claim text.