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US 2022/0187697 A1Published application
Method and apparatus to anneal euv mask blank
AssigneeApplied Materials, Inc.
InventorsHerng Yau Yoong, Wen Xiao, Ribhu Gautam, Sanjay Bhat, Vibhu Jindal
Life of this patent
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Abstract
Apparatus and methods to improve centroid wavelength uniformity of EUV mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank. Selected regions and sub regions of the EUV mask blank are selectively heated, resulting in improved centroid wavelength uniformity of EUV mask blanks.
Claims20
A method of manufacturing an extreme ultraviolet (EUV) mask blank comprising:
- heating a measurement region area of the EUV mask blank including a top side having multilayer stack which reflects EUV radiation, the measurement region area defined by a length and a width and comprising a plurality of sub regions, each of the plurality of sub regions comprising a sub region area smaller than that the measurement region area;
- and
- selectively heating at least one of the plurality of sub regions of the multilayer stack.
An apparatus configured to selectively heat a portion of an EUV mask blank, the apparatus comprising:
- a chamber including a pedestal having a surface configured to support the EUV mask blank;
- a radiation source positioned and configured to direct radiation toward the surface configured to support the EUV mask blank;
- and
- a controller configured to control the radiation source to selectively direct heat toward a first region of the surface configured to support the EUV mask blank to a first temperature while maintaining a second region of the surface configured to support the EUV mask blank at a second temperature lower than the first temperature, the controller configured to execute a selective heating process based on a centroid wavelength non-uniformity profile of the EUV mask blank.
1 more element
Dependencies are inferred from the claim text.