Deposition method and deposition apparatus
AssigneeTokyo Electron Limited
InventorYu KOMAI
Life of this patent
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Abstract
A deposition method for depositing a silicon oxide film on a recess formed on a surface of a substrate in a process container includes: a) adsorbing a silicon-containing gas on a substrate; b) exposing the substrate to a plasma formed of an oxidizing gas containing an oxygen gas and an inert gas at a desired pressure; and c) repeating a) and b), wherein in b), a ratio between the oxygen gas and the inert gas is determined based on the desired pressure and association information in which ratios between the oxygen gas and the inert gas are associated with information regarding a loading effect for respective pressures in the process container.
Claims4
A deposition method for depositing a silicon oxide film on a recess formed on a surface of a substrate in a process container, the deposition method comprising:
- a) adsorbing a silicon-containing gas on a substrate;
- b) exposing the substrate to a plasma formed of an oxidizing gas containing an oxygen gas and an inert gas at a desired pressure;
- and
- c) repeating a) and b),
- wherein in b), a ratio between the oxygen gas and the inert gas is determined based on the desired pressure and association information in which ratios between the oxygen gas and the inert gas are associated with information regarding a loading effect for respective pressures in the process container.
A deposition apparatus comprising:
- a process container;
- a gas supply section configured to supply a process gas into the process container;
- an exhaust section configured to exhaust an inside of the process container;
- and
- a controller,
- wherein the controller is configured to execute
- a) adsorbing a silicon-containing gas on a substrate;
- b) exposing the substrate to a plasma formed of an oxidizing gas containing an oxygen gas and an inert gas at a desired pressure;
- and
- c) repeating a) and b),
- to control the gas supply section and the exhaust section so as to deposit a silicon oxide film on a recess formed on a surface of the substrate in the process container.
Dependencies are inferred from the claim text.