Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

A semiconductor device structure comprising:

• a semiconductor channel region;
• and
• a gate stack disposed on the semiconductor channel region, wherein the gate stack comprises:
• a gate dielectric disposed on the semiconductor channel region;
• and
• a gate electrode comprising a molybdenum nitride film disposed on the gate dielectric, wherein the molybdenum nitride film has an electrical resistivity of less than 750 μΩ-cm at an average molybdenum nitride film thickness of less than 100 Å.

A semiconductor device structure comprising:

• a semiconductor channel region;
• and
• a gate stack disposed on the semiconductor channel region, wherein the gate stack comprises:
• a gate dielectric disposed on the semiconductor channel region;
• and
• a gate electrode comprising a molybdenum nitride film disposed on the gate dielectric, wherein the molybdenum nitride film has a percentage roughness of less than 1.5%.