Method of copper hillock detecting
AssigneeUnited Microelectronics Corp.
InventorsChing-Chih Chang, Yi-Hsiu Chen, Yuan-Fu Ko, Chih-Sheng Chang
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Abstract
A method of copper hillock detecting includes the following steps. A testkey structure is disposed on a substrate, wherein the testkey structure includes a lower metallization layer, an upper metallization layer, and a dielectric layer between the lower metallization layer and the upper metallization layer. A force voltage difference is applied to the lower metallization layer and the upper metallization layer under a test temperature and stress time. A changed sensing voltage difference to the lower metallization layer and the upper metallization layer is detected for detecting copper hillock.
Claims18
A method of copper hillock detecting, comprising:
- disposing a testkey structure on a substrate, wherein the testkey structure comprises:
- a lower metallization layer, an upper metallization layer, and a dielectric layer between the lower metallization layer and the upper metallization layer;
- applying a force voltage difference to the lower metallization layer and the upper metallization layer under a test temperature and stress time;
- and
- detecting a changed sensing voltage difference to the lower metallization layer and the upper metallization layer for detecting copper hillock.
Dependencies are inferred from the claim text.