Film formation method and film formation device
AssigneeTokyo Electron Limited
InventorsMichitaka AITA, Ken ITABASHI, Ryota IFUKU, Takaaki KATO, Kazuki YAMADA
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Abstract
A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.
Claims7
A film formation method comprising:
- adsorbing a precursor of a raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed;
- and
- forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.
A film formation apparatus comprising:
- a processing container in which a substrate on which a film is to be formed is disposed;
- a gas supplier configured to supply a raw material gas for film formation and a reaction gas to an interior of the processing container;
- an irradiator configured to irradiate the interior of the processing container with ultraviolet light;
- and
- a controller configured to perform control to cause a precursor of the raw material gas to be adsorbed onto a surface of the substrate by irradiating the interior of the processing container with ultraviolet light having a first wavelength that separates a predetermined bond of the raw material gas from the irradiator while supplying the raw material gas from the gas supplier, and then cause a reaction gas to be supplied from the gas supplier so that the precursor and the reaction gas react with each other on the surface of the substrate and a layer is formed on the surface of the substrate.
Dependencies are inferred from the claim text.