Ald of metal-containing films using cyclopentadienyl compounds
AssigneeASM IP Holding B.V.
InventorsSean T. Barry, Yamile A.M. Wasslen, Antti H. Rahtu
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Abstract
Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.
Claims21
(canceled)
A process for depositing a thin film on a substrate in a reactor comprising:
- contacting the substrate with a vapor phase first precursor comprising a first zirconium compound comprising at least one cyclopentadienyl ligand and at least one ligand comprising bidentate bonding that is bonded to the zirconium through nitrogen;
- contacting the substrate with an inert purge gas;
- and
- contacting the substrate with a vapor phase first reactant.
Dependencies are inferred from the claim text.