Method of forming a structure including silicon-carbon material, structure formed using the method, and system for forming the structure
AssigneeASM IP Holding B.V.
InventorsYoshio Susa, Naoki Umehara, Yu Min Huang
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Abstract
Methods and systems for forming a structure including silicon-carbon material and structures formed using the methods or systems are disclosed. Exemplary methods include providing a first gas to the reaction space, providing a silicon-carbon precursor to the reaction space, ceasing a flow of the silicon-carbon precursor to the reaction space, forming a first plasma within the reaction space to thereby deposit silicon-carbon material on a surface of the substrate, and optionally treating the silicon-carbon material with activated species to form treated silicon-carbon material.
Claims23
A method of filling a patterned recess on a surface of a substrate, the method comprising the steps of:
- providing a substrate comprising the patterned recess within a reaction space;
- providing a first gas to the reaction space;
- providing a silicon-carbon precursor to the reaction space;
- ceasing a flow of the silicon-carbon precursor to the reaction space;
- and
- forming a first plasma within the reaction space to thereby deposit silicon-carbon material on a surface of the substrate.
Dependencies are inferred from the claim text.