Film forming apparatus and film forming method

A film forming apparatus comprising:

• a processing container;
• a substrate holder configured to hold a substrate inside the processing container;
• a cathode unit disposed above the substrate holder;
• and
• a gas introducing mechanism configured to introduce a plasma generating gas into the processing container,
• wherein the cathode unit comprises:
• a target configured to emit sputtered particles to the substrate;
• a power supply configured to supply electric power to the target;
• a magnet provided on a rear side of the target, and configured to apply a leakage magnetic field to the target;
• and
• a magnet driving part configured to drive the magnet,
• wherein the magnet driving part is configured to move the magnet along a long side direction and a short side direction of the target, and
• magnetron plasma is formed near the target, and the sputtered particles are deposited on the substrate by magnetron sputtering.

A film forming method comprising:

• providing a film forming apparatus, wherein the film forming apparatus includes:
• a processing container;
• a substrate holder configured to hold a substrate inside the processing container;
• a cathode unit disposed above the substrate holder;
• and
• a gas introducing mechanism configured to introduce a plasma generating gas into the processing container,
• wherein the cathode unit includes:
• a target configured to emit sputtered particles to the substrate;
• a power supply configured to supply electric power to the target;
• a magnet provided on a rear side of the target, and configured to apply a leakage magnetic field to the target;
• and
• a magnet driving part configured to drive the magnet, and
• wherein the magnet driving part includes:
• an oscillation driver configured to oscillate the magnet along the target;
• and
• a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver;
• depositing the sputtered particles on the substrate by magnetron sputtering by supplying the electric power to the target while introducing the plasma generating gas into the processing container to form magnetron plasma near the target;
• oscillating the magnet by the oscillation driver of the magnet driving part while the sputtered particles are being deposited;
• and
• driving the magnet by the perpendicular driver of the magnet driving part such that a leakage magnetic field strength exerted from the magnet to the target becomes appropriate when the magnet is being oscillated.