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AssigneeTokyo Institute of Technology
InventorsHiroshi FUNAKUBO, Takao SHIMIZU, Takanori MIMURA, Yoshiko NAKAMURA, Reijiro SHIMURA, Yu-ki TASHIRO
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Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C. Also provided are the ferroelectric film, which is formed on an organic substrate, glass, or metal substrate, which can be used only at low temperatures, and a ferroelectric element and a ferroelectric functional element or device using the ferroelectric film.
A production process of a ferroelectric film, which comprises
A ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, provided on a substrate which is selected from the group consisting of a substrate comprising a glass having a glass transition point of lower than 300° C., a substrate comprising a macromolecular organic layer, a substrate comprising a metal layer having a softening temperature of lower than 300° C., and an inside of a semiconductor device.
A ferroelectric functional element, comprising said ferroelectric film according to claim, and a pair of electrodes.
Dependencies are inferred from the claim text.