Cleaning solution and cleaning method
AssigneeFUJIFILM Electronic Materials Co., Ltd.
InventorTetsuya KAMIMURA
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Abstract
There is provided a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in storage stability. In addition, there is provided a method of cleaning semiconductor substrates having undergone CMP. The cleaning liquid for semiconductor substrates having undergone CMP shows alkaline properties and contains: an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts; a chelating agent; and water. The amine compound content is not less than 25.5 mass % and less than 90 mass % based on the total mass of the cleaning liquid, and the water content is 10 to 60 mass % based on the total mass of the cleaning liquid.
Claims19
A cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process,
- wherein the cleaning liquid shows alkaline properties and comprising:
- an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts;
- a chelating agent;
- and
- water,
- a content of the amine compound is not less than 25.5 mass % and less than 90 mass % based on a total mass of the cleaning liquid, and
- a content of the water is 10 to 60 mass % based on the total mass of the cleaning liquid.
Dependencies are inferred from the claim text.