Wet anisotropic etching of silicon
AssigneeTexas Instruments Incorporated
InventorSimon Joshua JACOBS
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Abstract
An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.
Claims20
An alkaline etching solution comprising:
- a hydroxide salt;
- a polyol having at least three hydroxyl (—OH) groups;
- and
- water.
A method of producing a semiconductor device, the method comprising:
- obtaining a semiconductor substrate having masked and unmasked surfaces;
- exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched,
- wherein the alkaline etching solution comprises:
- a hydroxide salt;
- a polyol having at least three hydroxyl (—OH) groups;
- and water;
- and
- performing additional processing to produce the semiconductor device.
A method of forming an assembly of two or more wafers, the method comprising:
- bonding two or more wafers together with temporary or permanent bonding between faces thereof;
- and
- before or after the bonding, etching at least one of the two or more wafers with an alkaline etching solution including a hydroxide salt;
- a polyol having at least three hydroxyl (—OH) groups;
- and water.
Dependencies are inferred from the claim text.