A method for chemical mechanical polishing of a substrate, comprising:
- providing a substrate, wherein the substrate comprises dielectric materials of silicon oxide, silicon nitride and polysilicon;
- providing an acid chemical mechanical polishing composition according to claim 1 comprising:
- water;
- colloidal silica abrasive particles comprising a silica core comprising a nitrogen species, a cerium compound comprising cerium oxide, cerium hydroxide, or mixtures thereof
- coating the silica core, and a positive zeta potential;
- an oxidizing agent;
- optionally a pH adjusting agent;
- optionally a biocide;
- optionally a surfactant;
- and
- a pH less than 7;
- providing a chemical mechanical polishing pad with a polishing surface;
- creating dynamic contact at an interface between the polishing surface of the acid chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa;
- and
- dispensing the acid chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;
- wherein the substrate is polished;
- and, wherein the silicon dioxide is removed from the substrate at enhanced removal rates over silicon nitride and polysilicon.