Epitaxial-silicon wafer with a buried oxide layer
AssigneeHewlett-Packard Development Company, L.P.
InventorsStanley J. Wang, James E. Ellenson
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Abstract
Examples of an epitaxial-silicon wafer with a buried oxide layer are described herein. Examples of methods to manufacture an epitaxial-silicon wafer with a buried oxide layer are also described herein. In some examples, material may be removed from an epitaxial-silicon wafer at a surface opposite an epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness. The thinned epitaxial-silicon wafer may be bonded to an oxidized-silicon wafer at an oxidized surface forming a buried oxide layer.
Claims15
A method, comprising:
- removing material from an epitaxial-silicon wafer at a surface opposite an epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness;
- and
- bonding the thinned epitaxial-silicon wafer to an oxidized-silicon wafer at an oxidized surface forming a buried oxide layer.
A method, comprising:
- attaching an epitaxial surface layer of a epitaxial-silicon wafer to a handle wafer;
- grinding a surface opposite the epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness;
- polishing the surface opposite the epitaxial surface layer;
- removing the thinned epitaxial-silicon wafer from the handle wafer;
- and
- bonding the thinned epitaxial-silicon wafer to an oxidized-silicon wafer at an oxidized surface forming a buried oxide layer.
A semiconductor device, comprising:
- an epitaxial-silicon wafer comprising an epitaxial surface layer, wherein material is removed from the epitaxial-silicon wafer at a surface opposite the epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness;
- and
- an oxidized-silicon wafer bonded to the thinned epitaxial-silicon wafer at an oxidized surface forming a buried oxide layer.
Dependencies are inferred from the claim text.