Polishing pad sheet, polishing pad, and method for manufacturing semiconductor device

A polishing pad comprising:

• a polishing layer and a cushion layer,
• wherein the cushion layer is derived from a polishing pad sheet, the polishing pad sheet includes:
• a first surface which is a polishing layer attachment surface;
• and a second surface which is a rear surface of the first surface, the first surface has a value of the following Equation 1 of 4.20 to 5.50, and the adhesive force of the polishing layer attachment surface to the polishing layer is 8.00 kgf/25 mm or more:
• 
• Sv
• 
• S
• ⁢
• z
• ×
• P
• ⁡
• (
• %
• )
• [
• Equation
• ⁢
• ⁢
• 1
• ]
• where, Sv is a maximum pit height roughness value of the first surface, Sz is a maximum height roughness value of the first surface, and P is a compressibility (%) value calculated from the equation of (D1−D2)/D1×100 by collecting a specimen measuring 25 mm in width and length each from the polishing pad sheet, measuring a dial gauge in no-load condition, and then pressing with a standard weight of 85 g to measure the first thickness (D1) when 30 seconds have elapsed, and by setting up a pressure condition in which 800 g of a weight is added to the standard weight and measuring the second thickness (D2) when 3 minutes have elapsed.

A method for manufacturing a semiconductor device, the method comprising the steps of:

• providing a polishing pad including a polishing layer and a cushion layer;
• and
• disposing the surface to be polished of a polishing object to be in contact with the polishing surface of the polishing layer and then polishing the polishing object while rotating them relative to each other under a pressurized condition,
• wherein the polishing object includes a semiconductor substrate, the cushion layer is derived from a polishing pad sheet, the polishing pad sheet includes:
• a first surface which is a polishing layer attachment surface;
• and a second surface which is a rear surface of the first surface, the first surface has a value of the following Equation 1 of 4.20 to 5.50, and the adhesive force of the polishing layer attachment surface to the polishing layer is 8.00 kgf/25 mm or more:
• 
• Sv
• 
• S
• ⁢
• z
• ×
• P
• ⁡
• (
• %
• )
• [
• Equation
• ⁢
• ⁢
• 1
• ]
• where, Sv is a maximum pit height roughness value of the first surface, Sz is a maximum height roughness value of the first surface, and P is a compressibility (%) value calculated from the equation of (D1−D2)/D1×100 by collecting a specimen measuring 25 mm in width and length each from the polishing pad sheet, measuring a dial gauge in no-load condition, and then pressing with a standard weight of 85 g to measure the first thickness (D1) when 30 seconds have elapsed, and by setting up a pressure condition in which 800 g of a weight is added to the standard weight and measuring the second thickness (D2) when 3 minutes have elapsed.