Scrubber, ald process system including the scrubber and method for fabricating semiconductor device using the scrubber

A scrubber comprising:

• a housing connected to a process chamber in which an ALD (atomic layer deposition) process is performed;
• a filter unit which is disposed inside the housing, and includes a first filter and a second filter surrounding the first filter, which are configured to filter a first powder from a process gas received from the process chamber;
• a gas inlet which is connected to the housing, and is configured to receive the process gas from the process chamber and provide the process gas to the filter unit;
• and
• a fin structure that extends in a vertical direction inside the first filter, and is configured to adsorb a second powder remaining in the process gas after passing through the first filter.

An atomic layer deposition (ALD) process system comprising:

• a process chamber in which an ALD process is performed to deposit titanium nitride on a wafer;
• a scrubber which is connected to the process chamber, and is configured to accommodate a process gas provided from the process chamber to remove a powder contained in the process gas;
• and
• a pump configured to supply the process gas provided from the process chamber to the scrubber,
• wherein the scrubber includes:
• a housing,
• a filter unit which is disposed inside the housing and is configured to filter a first powder of the powder from the process gas, and
• a fin structure which extends in a vertical direction inside the filter unit, and is configured to adsorb a second powder of the powder remaining in the process gas after passing through the filter unit.